Anti-resonance features of destructive quantuminterference in single-molecule thiophene junctions achieved by electrochemical gating
Authors:
Jie Bai, AbdalghaniDaaoub, Sara Sangtarash, Xiaohui Li, Yongxiang Tang, Qi Zou,Hatef Sadeghi , Shuai Liu , Xiaojuan Huang, Zhibing Tan, Junyang Liu, Yang Yang, Jia Shi,Gábor Mészáros, Wenbo Chen, Colin Lambert and Wenjing Hong
Abstract:
Controlling the electrical conductance and in particular the occurrence of quantum interference in single-molecule junctions through gating effects has potential for the realization of high-performance functional molecular devices. In this work we used an electrochemically gated, mechanically controllable break junction technique to tune the electronic behaviour of thiophenebased molecular junctions that show destructive quantum interference features. By varying the voltage applied to the electrochemical gate at room temperature, we reached a conductance minimum that provides direct evidence of charge transport controlled by an anti-resonance arising from destructive quantum interference. Our molecular system enables conductance tuning close to two orders of magnitude within the non-faradaic potential region, which is significantly higher than that achievedwith molecules not showing destructive quantum interference. Our experimental results, interpreted using quantum transport theory, demonstrate that electrochemical gating is a promising strategy for obtaining improved in situ control over the electrical performance of interference-based molecular devices.
Source:https://chem.xmu.edu.cn/en/info/1021/1731.htm
