New Progress in Deep UV Photonic Material Independently Developed by XMU

Posted: 2014-01-12   Visits: 188

Anew wide band gap semiconductor material independently researched and developed by XMU has provided a new direction for deep UV optical electronic development. The "secret" lies in the purity and weigh of materials. By mutual transforming of photon and exciton, it is easier to emit deep UV light, and consequently enhance the efficiency of electronic material.

Recently, the result is published by an online open journal Scientific Report under the press publishing company of Nature.

This result is a product of Prof. Kang Junyong's group, a research group from School of Physical and Electronic Engineering. This group has been doing research on the deep UV wide band gap semiconductor for years. The topic is also a popular topic in physics.

Deep UV light refers to UV whose wave width is shorter than 280 nanometers. Due to its advantage in short length, and high frequency, it has special functions in purifying water and air, curing diseases, and information technology. Traditionally, the deep UV light was produced by high-pressure mercury lamp, which is huge in size and poisonous. While aluminum nitride based wide band gap semiconductor, which is used to produce deep UV light, is small size (smaller than a rice grain) and non-poisonous and the electric pressure is low. Also, its service life is hundred times longer. Since 2005, Prof Zhao Kangyong's group has worked on developing this highly purified wide band gap semiconductor material and equipment, and made breakthroughs many times.

By the end of 2010, PhD candidate of this research group Li Kongyi has discovered a particle named exciton-polariton. This particle is an combination of electrons and photons. Through this particle, the emission of laser can be achieved spontaneously, i.e., to emit laser driven by low electricity.

Li Kongyi says this particle itself is by no means special: "it exists in many materials, yet it is the first time it was discovered in deep UV materials." This discovery lays the foundation for independently research and development of such semiconductor by XMU, it also make it possible to use these material for conducting deep UV wave band high channel capability electronic communications and laser equipment.

Prof. Kang Junyong's group has made eminent progress in deep UV material research in diverse dimensions and various structural functions. PhD candidate Lin Wei, a member of the group, has made breakthrough in overcoming traits of aluminum nitride semiconductor to transmit in different direction and produce deep UV isotropic quantum-structural material, and it rises the controllable efficiency of deep UV semiconductor's transmission and emission. His attribution is published in the preface of international optical electron journal, Comments on laser and photons. Another member, PhD candidate Wu Yaping has invented a graphite monocrystal, which could overcome its traditional transparent electrode’s strong absorption of deep UV light, serving as a new option for deep UV light's integration.

(Text by Li Jing, Office of Communications)